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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1744TP
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The PA1744TP is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.
PACKAGE DRAWING (Unit: mm)
8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8, 9: Drain
FEATURES
1.49 0.21
* Low on-state resistance RDS(on) = 30 m MAX. (VGS = 10 V, ID = 5.0 A) * Low input capacitance Ciss = 3400 pF TYP. (VDS = 10 V, VGS = 0 V) * Built-in gate protection diode * Small and surface mount package (Power HSOP8)
1.44 TYP.
1 5.2 +0.17 -0.2
4 0.8 0.2 S
+0.10 -0.05
6.0 0.3 4.4 0.15
0.05 0.05
0.15
1.27 TYP. 0.40
1
+0.10 -0.05
0.10 S 0.12 M
2.9 MAX.
ORDERING INFORMATION
PART NUMBER PACKAGE Power HSOP8
8
2.0 0.2 9 4.1 MAX.
PA1744TP
5
ABSOLUTE MAXIMUM RATINGS (TA = 25C, Unless otherwise noted, all terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1
Note2
100 20 10 30 39 3.0 150 -55 to +150 10 10
V V A A W W C C A mJ
Gate Protection Diode Source Gate Body Diode
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3
PT2 Tch Tstg IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm 3. Starting Tch = 25C, VDD = 50 V, RG = 25 , VGS = 20 0 V, L = 100 H Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. G16410EJ1V0DS00 (1st edition) Date Published March 2003 NS CP(K) Printed in Japan
1.1 0.2
4
2002
PA1744TP
ELECTRICAL CHARACTERISTICS (TA = 25C, Unless otherwise noted, all terminals are connected.)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VDD = 80 V VGS = 10 V ID = 10 A
TEST CONDITIONS VDS = 100 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 5.0 A VGS = 10 V, ID = 5.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 50 V, ID = 5.0 A VGS = 10 V RG = 10
MIN.
TYP.
MAX. 10 10
UNIT
A A
V S
2.5 7
3.0 14 23 3400 390 200 22 10 55 7 66 12 22 0.8 65 170
3.5
Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
30
m pF pF pF ns ns ns ns nC nC nC V ns nC
VF(S-D) trr Qrr
IF = 10 A, VGS = 0 V IF = 10 A, VGS = 0 V di/dt = 100 A/s
Note Pulsed: PW 350 s, Duty Cycle 2%
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90% 90% 10% 10%
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet G16410EJ1V0DS
PA1744TP
TYPICAL CHARACTERISTICS (TA = 25C, Unless otherwise noted, all terminals are connected.)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - %
40
100
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W
80
30
60
20
40
10
20
0 0 25 50 75 100 125 150 175
0 0 25 50 75 100 125 150 175
TC - Case Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA
100 R DS(on) Lim ited (VGS = 10 V) 10 ID(DC) = 10 A ID(pulse) = 30 A TC = 25C Single pulse PW = 1 m s
ID - Drain Current - A
1
10 m s Power Dissipation Lim ited 100 m s
0.1 0.01
0.1
1
10
100
1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10
rth(t) - Transient Thermal Resistance - C/W
Rth(ch-C) = 3.2C/W
1
Single Pulse 0.1 1m
10 m 100 m 1 PW - Pulse Width - s 10 100 1000
Data Sheet G16410EJ1V0DS
3
PA1744TP
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
35 30 VGS = 10 V Pulsed
FORWARD TRANSFER CHARACTERISTICS
100
VDS = 10 V Pulsed TA = 150C 125C 75C 25C -25C
ID - Drain Current - A
25 20 15 10 5 0 0 0.2 0.4 0.6 0.8
ID - Drain Current - A
10
1
0.1
0.01
0.001 0 1 2 3 4 5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S
4 100
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
V D S = 10 V P ulsed T A = -25C 25C 75C 125C 150C
VGS(off) - Gate Cut-off Voltage - V
3.5 3 2.5 2 1.5 1 0.5 0 -25 0 25 50 75
VDS = 10 V ID = 1 m A
10
1
0.1
100
125
150
0.01 0.001
0.01
0.1
1
10
100
Tch - Channel Temperature - C
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
30 VGS = 10 V Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
40 35 30 25 20 15 10 0 5 10 15 20 ID = 5.0 A Pulsed
25
20
15 0.1 1 10 100
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet G16410EJ1V0DS
PA1744TP
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
60 50 40 30 20 10 0 -25 0 25 50 75 100 125 150 VGS = 10 V ID = 5.0 A Pulsed
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1 00 00
RDS(on) - Drain to Source On-state Resistance - m
Ciss, Coss, Crss - Capacitance - pF
C iss
1 00 0 C oss
1 00 C rs s VGS = 0 V f = 1 MHz 10 0 .01 0 .1 1 10 1 00
Tch - Channel Temperature - C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000 1 20
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
12 10 V DD = 80 V 50 V 20 V 8 6 V GS 4 2 0 0 10 20 30 40 50 60 70
VDS - Drain to Source Voltage - V
1 10 1 00 90 80 70 60 50 40 30 20 10 0 V DS
100 td(off) td(on) 10 tr tf
1 0.1 1 10 100
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100 VGS = 0 V Pulsed 100
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
di/dt = 100 A/s VGS = 0 V
10
1
0.1
0.01 0 0.5 1 1.5
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
10 0.1 1 10 100
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
Data Sheet G16410EJ1V0DS
5
VGS - Gate to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
VDD = 50 V VGS = 10 V RG = 0
ID = 1 0 A
PA1744TP
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
100
SINGLE AVALANCHE ENERGY DERATING FACTOR
100 VDD = 50 V R G = 25 VGS = 20 0 V IAS 10 A
IAS - Single Avalanche Current - A
Energy Derating Factor - %
V D D = 50 V R G =25 V G S = 20 0 V
80
IAS = 10 A 10 EAS = 10 m J
60
40
20
1 0.001
0 0.01 0.1 1 10 25 50 75 100 125 150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - C
6
Data Sheet G16410EJ1V0DS
PA1744TP
* The information in this document is current as of March, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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